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PDF IXTY1R6N100D2 Data sheet ( Hoja de datos )
| Número de pieza | IXTY1R6N100D2 | |
| Descripción | Depletion Mode MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Depletion Mode
MOSFET
N-Channel
Preliminary Technical Information
IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
VDSX
ID(on)
=
>
≤RDS(on)
1000V
1.6A
10Ω
TO-252 (IXTY)
Symbol
VDSX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
1000
V
±20 V
±30 V
100 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
0.35 g
2.50 g
3.00 g
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 100μA
IGSX VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
RDS(on)
ID(on)
VGS = 0V, ID = 0.8A, Note 1
VGS = 0V, VDS = 50V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1000
V
- 2.5
- 4.5 V
±100 nA
2 μA
25 μA
10 Ω
1.6 A
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2009 IXYS CORPORATION, All Rights Reserved
www.DataSheet.in
DS100185A(12/09)
1 page  
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
10,000
f = 1 MHz
1,000
Fig. 13. Capacitance
Ciss
100 Coss
10
1
0
Crss
5 10 15 20 25 30 35 40
VDS - Volts
5
4 VDS = 500V
3
I D = 0.8A
I G = 1mA
2
1
0
-1
-2
-3
-4
-5
05
Fig. 14. Gate Charge
10 15
QG - NanoCoulombs
20
25
Fig. 15. Forward-Bias Safe Operating Area
10.00
@ TC = 25ºC
Fig. 16. Forward-Bias Safe Operating Area
10.00
@ TC = 75ºC
1.00
RDS(on) Limit
0.10
TJ = 150ºC
TC = 25ºC
Single Pulse
100..001010
100
VDS - Volts
100µs
1ms
1.00
RDS(on) Limit
10ms
100ms
DC
0.10
TJ = 150ºC
TC = 75ºC
Single Pulse
Fig. 17. Maximum Transient Thermal Impedance
0.01
1,000
10
100
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
1,000
Fig. 17. Maximum Transient Thermal Impedance
2.00
hvjv
1.00
0.10
0.01
0.00001
0.0001
0.001
© 2009 IXYS CORPORATION, All Rights Reserved
www.DataSheet.in
0.01
Pulse Width - Seconds
0.1
1 10
IXYS REF: T_1R6N100D2(2C)8-24-09
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTY1R6N100D2.PDF ] | |
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