IXTH6N50D2 Datasheet PDF - IXYS Corporation
| Part Number | IXTH6N50D2 | |
| Description | Depletion Mode MOSFET | |
| Manufacturers | IXYS Corporation | |
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Depletion Mode
MOSFET
N-Channel
Preliminary Technical Information
IXTA6N50D2
IXTP6N50D2
IXTH6N50D2
VDSX
ID(on)
=
>
≤RDS(on)
500V
6A
500mΩ
TO-263 AA (IXTA)
Symbol
VDSX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
500 V
±20 V
±30 V
300 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 250μA
IGSX VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
RDS(on)
ID(on)
VGS = 0V, ID = 3A, Note 1
VGS = 0V, VDS = 25V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
500 V
- 2.0
- 4.0 V
±100 nA
5 μA
50 μA
500 mΩ
6A
G
S
D (Tab)
TO-220AB (IXTP)
GD S
TO-247 (IXTH)
D (Tab)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2009 IXYS CORPORATION, All Rights Reserved
DS100177A(12/09)
www.DataSheet.in
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IXTA6N50D2 IXTP6N50D2
IXTH6N50D2
10,000
Fig. 13. Capacitance
1,000
Ciss
Coss
100
f = 1 MHz
10
0
5
10
15 20 25
VDS - Volts
Crss
30 35
40
Fig. 15. Forward-Bias Safe Operating Area
100.0
@ TC = 25ºC
RDS(on) Limit
10.0
100µs
5
4 VDS = 250V
I D = 3A
3 I G = 10mA
2
Fig. 14. Gate Charge
1
0
-1
-2
-3
-4
-5
0 10 20 30 40 50 60 70 80 90 100
QG - NanoCoulombs
Fig. 16. Forward-Bias Safe Operating Area
100.0
@ TC = 75ºC
RDS(on) Limit
10.0
25µs
100µs
1.0
0.1
10
TJ = 150ºC
TC = 25ºC
Single Pulse
1.000
100
VDS - Volts
1ms
10ms
100ms
DC
1,000
1.0
0.1
10
TJ = 150ºC
TC = 75ºC
Single Pulse
Fig. 17. Maximum Transient Thermal Impedance
100
VDS - Volts
1ms
10ms
100ms
DC
1,000
0.100
0.010
0.001
0.00001
0.0001
0.001
© 2009 IXYS CORPORATION, All Rights Reserved
www.DataSheet.in
0.01
Pulse Width - Seconds
0.1
1 10
IXYS REF: T_6N50D2(6C)8-13-09
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| Part Number | Description | MFRS |
| IXTH6N50D2 | The function is Depletion Mode MOSFET. IXYS Corporation | |
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