|
|
PDF IXTP3N50D2 Data sheet ( Hoja de datos )
| Número de pieza | IXTP3N50D2 | |
| Descripción | Depletion Mode MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXTP3N50D2 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
Depletion Mode
MOSFET
N-Channel
IXTA3N50D2
IXTP3N50D2
VDSX
ID(on)
=
>
≤RDS(on)
500V
3A
1.5Ω
TO-263 AA (IXTA)
Symbol
VDSX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
500 V
±20 V
±30 V
125 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
2.5 g
3.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 250μA
IGSX VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
RDS(on)
ID(on)
VGS = 0V, ID = 1.5A, Note 1
VGS = 0V, VDS = 25V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
500 V
- 2.0
- 4.0 V
±100 nA
5 μA
50 μA
1.5 Ω
3A
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2009 IXYS CORPORATION, All Rights Reserved
www.DataSheet.in
DS100148B(12/09)
1 page  
IXTA3N50D2
IXTP3N50D2
10,000
f = 1 MHz
1,000
Fig. 13. Capacitance
Ciss
Coss
100
10
0
100.0
Crss
5 10 15 20 25 30 35
VDS - Volts
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25ºC
40
5
4 VDS = 250V
I D = 1.5A
3 I G = 10mA
2
1
0
-1
-2
-3
-4
-5
0 5 10
Fig. 14. Gate Charge
15 20 25
QG - NanoCoulombs
30
35
Fig. 16. Forward-Bias Safe Operating Area
100.0
@ TC = 75ºC
40
10.0
RDS(on) Limit
1.0
100.0.10 10
TJ = 150ºC
TC = 25ºC
Single Pulse
2.00
1.00
25µs
100µs
10.0
RDS(on) Limit
100
VDS - Volts
1ms
1.0
10ms
100ms
DC
TJ = 150ºC
TC = 75ºC
Fig. 17. Maximum Transient TherSmingalel PImulsepedance
0.1
1,000
10
Fig. 17. Maximum Transient Thermal Impedance
100
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
1,000
0.10
0.01
0.00001
0.0001
0.001
© 2009 IXYS CORPORATION, All Rights Reserved
www.DataSheet.in
0.01
Pulse Width - Seconds
0.1
1 10
IXYS REF: T_3N50D2(3C)8-17-09-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTP3N50D2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXTP3N50D2 | Depletion Mode MOSFET | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |