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PDF IXFK40N90P Data sheet ( Hoja de datos )
| Número de pieza | IXFK40N90P | |
| Descripción | Polar Power MOSFET HiPerFET | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK40N90P
IXFX40N90P
VDSS =
ID25 =
RDS(on) ≤
trr ≤
900V
40A
210mΩ
300ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXFK)
Mounting force (IXFX)
TO-264
TO-247
Maximum Ratings
900
900
± 30
± 40
40
80
20
1.5
V
V
V
V
A
A
A
J
15
960
-55 ... +150
150
-55 ... +150
300
260
1.13/10
20..120 /4.5..27
10
6
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
Symbol
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VGS = 0V, ID = 3mA
900 V
VDS = VGS, ID = 1mA
3.5 6.5 V
VGS = ± 30V, VDS = 0V
VDS = VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
± 200 nA
50 μA
3.5 mA
210 mΩ
TO-264 (IXFK)
G
D
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche Rated
z Low package inductance
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor drives
z Robotics and servo controls
© 2008 IXYS CORPORATION,All rights reserved
www.DataSheet.in
DS100061(10/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFK40N90P.PDF ] | |
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