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G40N60A4 の電気的特性と機能

G40N60A4のメーカーはFairchild Semiconductorです、この部品の機能は「HGTG40N60A4」です。


製品の詳細 ( Datasheet PDF )

部品番号 G40N60A4
部品説明 HGTG40N60A4
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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G40N60A4 Datasheet, G40N60A4 PDF,ピン配置, 機能
Data Sheet
HGTG40N60A4
August 2003
File Number
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between 25oC and 150oC. This IGBT
is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49347.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG40N60A4
TO-247
40N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 100kHz Operation At 390V, 40A
• 200kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . .55ns at TJ = 125o
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BACK METAL)
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
www.DataSheet.in
HGTG40N60A4 Rev. B2

1 Page





G40N60A4 pdf, ピン配列
HGTG40N60A4
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG = 2.2
L = 200µH
Test Circuit (Figure 20)
- 27
-
ns
- 20
-
ns
- 185 225 ns
- 55 95 ns
- 400
-
µJ
Turn-On Energy (Note 3)
EON2
- 1220 1400 µJ
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
EOFF
RθJC
- 700 800 µJ
- - 0.2 oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.
Typical Performance Curves Unless Otherwise Specified
80
70 PACKAGE LIMITED
60
VGE = 15V
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
225 TJ = 150oC, RG = 2.2, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0 100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2003 Fairchild Semiconductor Corporation
www.DataSheet.in
HGTG40N60A4 Rev. B2


3Pages


G40N60A4 電子部品, 半導体
HGTG40N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
6 TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
5 ETOTAL = EON2 + EOFF
ICE = 80A
4
3
100 TJ = 125oC, L = 200µH
VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10 ICE = 80A
ICE = 40A
2 ICE = 40A
1 ICE = 20A
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
1
ICE = 20A
0.1
1 10 100 500
RG, GATE RESISTANCE ()
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
14
FREQUENCY = 1MHz
12
10
8
CIES
6
4
COES
2
CRES
0
0 10 20 30 40 50 60 70 80 90
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.3
2.2
ICE = 80A
2.1
ICE = 40A
2.0
1.9
8
ICE = 20A
9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs
GATE TO EMITTER VOLTAGE
100
0.50
0.20
0.10
10-1
0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 19. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
101
©2003 Fairchild Semiconductor Corporation
HGTG40N60A4 Rev. B2
www.DataSheet.in

6 Page



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部品番号部品説明メーカ
G40N60A4

HGTG40N60A4

Fairchild Semiconductor
Fairchild Semiconductor


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