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PDF P6N70A Data sheet ( 特性 )

部品番号 P6N70A
部品説明 SSP6N70A
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 

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P6N70A Datasheet, P6N70A PDF,ピン配置, 機能
Advanced Power MOSFET
SSP6N70A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 700V
Low RDS(ON) : 1.552 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC )
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O1
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 700 V
RDS(on) = 1.8
ID = 6 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
700
6
3.8
24
582
6
13
2.5
130
1.04
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ΟC
ΟC
Typ.
--
0.5
--
Max.
0.96
--
62.5
Units
ΟC/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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P6N70A pdf, ピン配列
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
101 Top :
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
6
VGS = 10 V
4
2 VGS = 20 V
@ Note : TJ = 25 oC
0
0 5 10 15 20
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
1500
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
1000
500
C oss
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
SSP6N70A
Fig 2. Transfer Characteristics
101
100 150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
10-1
2
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.4 0.6 0.8 1.0
VSD , Source-Drain Voltage [V]
1.2
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 140 V
VDS = 350 V
VDS = 560 V
5
@ Notes : ID = 6.0 A
0
0 10 20 30 40 50 60
QG , Total Gate Charge [nC]
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P6N70A 電子部品, 半導体
SSP6N70A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s--e--W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
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