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PDF P6N70A Data sheet ( 特性 )

部品番号 P6N70A
部品説明 SSP6N70A
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 

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P6N70A Datasheet, P6N70A PDF,ピン配置, 機能
Advanced Power MOSFET
SSP6N70A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 700V
Low RDS(ON) : 1.552 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC )
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O1
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 700 V
RDS(on) = 1.8
ID = 6 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
700
6
3.8
24
582
6
13
2.5
130
1.04
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ΟC
ΟC
Typ.
--
0.5
--
Max.
0.96
--
62.5
Units
ΟC/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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