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4AM15 の電気的特性と機能

4AM15のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N-Channel/P-Channel Power MOS FET Array」です。


製品の詳細 ( Datasheet PDF )

部品番号 4AM15
部品説明 Silicon N-Channel/P-Channel Power MOS FET Array
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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4AM15 Datasheet, 4AM15 PDF,ピン配置, 機能
4AM15
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N Channel: RDS(on) 0.5 , VGS = 10 V, ID = 2 A
P Channel: RDS(on) 0.9 , VGS = –10 V, ID = –2 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
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4AM15 pdf, ピン配列
4AM15
Electrical Characteristics (Ta = 25°C)
N Channel
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DS 200
S
Gate to source breakdown
voltage
V(BR)GS ±20
S
Gate to source leak current
IGSS —
Zero gate voltage drain current IDSS —
Gate to source cutoff voltage VGS(off) 2.0
Static drain to source on state RDS(on) —
resistance
Forward transfer admittance |yfs|
1.5
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse Test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Typ Max Unit Test conditions
——V
ID = 10 mA, VGS = 0
——V
IG = ±100 µA, VDS = 0
— ±10
— 250
— 4.0
0.33 0.5
µA
µA
V
3.0 —
S
750 —
260 —
40 —
19 —
26 —
45 —
24 —
1.0 —
pF
pF
pF
ns
ns
ns
ns
V
VGS = ±16 V, VDS = 0
VDS = 160 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V*1
ID = 2 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2 A
VGS = 10 V
RL = 15
IF = 4 A, VGS = 0
125 — ns IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
See characteristic curves of 2SK1957
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4AM15 電子部品, 半導体
4AM15
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.
6
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