|
|
4AM17のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N/P-Channel/P-Channel Power MOS FET Array」です。 |
部品番号 | 4AM17 |
| |
部品説明 | Silicon N/P-Channel/P-Channel Power MOS FET Array | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと4AM17ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
4AM17
Silicon N/P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
N Channel: RDS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A
P Channel : RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A
• 4 V gate drive devices.
• High density mounting
Outline
SP-12
ADE-208-729 (Z)
1st. Edition
February 1999
1
G
2
D5
G
4
D8
G
9
D 12
G
11
D
1 2 3 4 5 6 7 8 9101112
S 3 S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
www.DataSheet.in
1 Page Electrical Characteristics (Ta = 25°C)
( N Channel )
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate series resistance
Symbol Min
V(BR)DSS
V(BR)GSS
I GSS
I DSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
60
±20
—
—
1.0
—
—
3.5
—
Coss —
Crss
—
Rg —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note: 3. Pulse test
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
4AM17
Typ
—
—
—
—
—
0.13
0.19
5.5
33
220
5.2
1.5
0.15
0.5
3.2
1.4
1.5
850
Max
—
—
±10
250
2.5
0.17
0.24
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
kΩ
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 4 A, VGS = 10 V Note3
ID = 4 A, VGS = 4 V Note3
ID = 4 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1 MHz
VDS = 10 V, VGS = 0
f = 1 MHz
VGS = 10 V, ID = 4 A
RL = 7.5 Ω
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0
diF/ dt = 50 A/ µs
www.DataSheet.in
3
3Pages 4AM17
Package Dimensions
31.0 ± 0.3
4.0 ± 0.2
Unit: mm
1.5 ± 0.2
0.85 ± 0.1
1.4
2.54
1 2 3 4 5 6 7 8 9 10 11 12
0.55
+0.1
–0.06
Hitachi Code
JEDEC
EIAJ
SP-12
—
—
6
www.DataSheet.in
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ 4AM17 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
4AM13 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
4AM15 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |