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PDF IRHNM597110 Data sheet ( Hoja de datos )
| Número de pieza | IRHNM597110 | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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PD-97179A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number Radiation Level
IRHNM597110 100K Rads (Si)
IRHNM593110 300K Rads (Si)
RDS(on)
1.2Ω
1.2Ω
ID
-3.1A
-3.1A
IRHNM597110
100V, P-CHANNEL
5 TECHNOLOGY
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Absolute Maximum Ratings
ID@ VGS = -12V, TC = 25°C
ID@ VGS = -12V, TC =100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
SMD-0.2
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
-3.1
-2.0 A
-12.4
23 W
0.18
W/°C
±20 V
28 mJ
-3.1 A
2.3 mJ
-21 V/ns
-55 to 150
°C
300 (for 5s)
0.25 (Typical)
g
1
12/20/07
www.DataSheet.in
1 page  
Pre-Irradiation
IRHNM597110
7
6 ID = -3.1A
5
4 TJ = 150°C
3
2
1
TJ = 25°C
0
4 6 8 10 12 14 16
-VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
4
3 TJ = 150°C
2
TJ = 25°C
1
Vgs = -12V
0
024
-ID, Drain Current (A)
6
Fig 6. Typical On-Resistance Vs
Drain Current
150
ID = -1.0mA
140
130
120
110
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
4
3
2
ID = -50µA
ID = -250µA
1
ID = -1.0mA
ID = -150mA
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
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| PDF Descargar | [ Datasheet IRHNM597110.PDF ] | |
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