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PDF IRHLYS77034CM Data sheet ( Hoja de datos )
| Número de pieza | IRHLYS77034CM | |
| Descripción | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97291
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
2N7607T3
IRHLYS77034CM
60V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level
IRHLYS77034CM 100K Rads (Si)
IRHLYS73034CM 300K Rads (Si)
RDS(on)
0.045Ω
0.045Ω
ID
20A*
20A*
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Low-Ohmic
TO-257AA
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary P-Channel Available -
IRHLYS797034CM
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC =100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
20*
20* A
80
75 W
0.6 W/°C
±10 V
98 mJ
20 A
7.5 mJ
6.9
-55 to 150
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/13/08
www.DataSheet.in
1 page  
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
100
90 ID = 20A
80
70
60
50 TJ = 150°C
40
30
20
10 TJ = 25°C
0
2 4 6 8 10
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
12
100
90
80
70
60
50
40
30
20
10
0
TJ = 150°C
TJ = 25°C
Vgs = 4.5V
10 20 30 40 50 60 70 80
ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
90
ID = 1.0mA
80
70
60
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
2.5
2.0
1.5
1.0 ID = 50µA
ID = 250µA
0.5 ID = 1.0mA
ID = 150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
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