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PDF IRHLNJ797034 Data sheet ( Hoja de datos )
| Número de pieza | IRHLNJ797034 | |
| Descripción | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97302A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHLNJ797034 100K Rads (Si)
IRHLNJ793034 300K Rads (Si)
RDS(on)
0.072Ω
0.072Ω
ID
22A*
22A*
2N7624U3
IRHLNJ797034
60V, P-CHANNEL
TECHNOLOGY
SMD-0.5
Internatio
MOSFETs
nparol vRideecstiimfieprle’ssoRlu7tTioMnLtooginicteLrfeacvienlg
Power
CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @VGS = -4.5V,TC = 25°C Continuous Drain Current
ID @VGS = -4.5V,TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
-22*
-14.9
-88
57
0.45
±10
79
-22
5.7
-12.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
1.0 (Typical)
g
1
10/05/10
www.DataSheet.in
1 page  
Pre-Irradiation
IRHLNJ797034, 2N7624U3
160
140 ID = -22A
120
100
80 TJ = 150°C
60
40
TJ = 25°C
20
0
2 4 6 8 10 12
-VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
140
130
120
110
100
90
80
70
60
50
40
30
0
TJ = 150°C
TJ = 25°C
Vgs = -4.5V
10 20 30 40 50 60 70 80
-ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
75
ID = -1.0mA
70
65
60
55
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
2.5
2.0
1.5
1.0
ID = -50µA
ID = -250µA
0.5 ID = -1.0mA
ID = -150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
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| PDF Descargar | [ Datasheet IRHLNJ797034.PDF ] | |
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