DataSheet.jp

IRHLNJ77034 の電気的特性と機能

IRHLNJ77034のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHLNJ77034
部品説明 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRHLNJ77034ダウンロード(pdfファイル)リンクがあります。

Total 9 pages

No Preview Available !

IRHLNJ77034 Datasheet, IRHLNJ77034 PDF,ピン配置, 機能
PD-97301
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHLNJ77034 100K Rads (Si)
IRHLNJ73034 300K Rads (Si)
RDS(on)
0.035
0.035
ID
22A*
22A*
2N7606U3
IRHLNJ77034
60V, N-CHANNEL
TECHNOLOGY
™
SMD-0.5
Internatio
MOSFETs
nparol vRideecstiimfieprle’ssoRlu7tTioMnLtooginicteLrfeacvienlg
Power
CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
22*
20
88
57
0.45
±10
63
22
5.7
8.8
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
1.0 (Typical)
g
1
05/06/08
www.DataSheet.in

1 Page





IRHLNJ77034 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHLNJ77034, 2N7606U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (SMD-0.5)
Upto 300K Rads (Si)1
Min Max
60 —
1.0 2.0
— 100
— -100
— 1.0
— 0.03
— 0.035
VSD Diode Forward Voltage„
— 1.2
1. Part numbers IRHLNJ77034, IRHLNJ73034
Units
V
nA
µA
V
Test Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS=0V
VGS = 4.5V, ID = 20A
VGS = 4.5V, ID = 20A
VGS = 0V, ID = 22A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -1V -2V -3V -4V -5V -7V -8V
Kr 37.3
Xe 63.3
Au 90
400 48.6 60 60 60 60 60 60 60 35
435 38.4 60 60 60 60 60
-
-
-
1480
80.4
60
-
-
-
-
- --
70
60
50
40
30
20
10
0
0 -1 -2 -3 -4 -5 -6 -7 -8
VGS
Kr
Xe
Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
www.DataSheet.in


3Pages


IRHLNJ77034 電子部品, 半導体
IRHLNJ77034, 2N7606U3
Pre-Irradiation
4000
3600
3200
2800
2400
2000
1600
1200
800
400
0
1
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
TJ = 150°C
10
1
TJ = 25°C
0.1
0.01
0.2
VGS = 0V
0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
1.6
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
12
ID = 22A
10
8
VDS = 48V
VDS = 30V
VDS = 12V
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
0 5 10 15 20 25 30 35 40 45 50 55 60
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
35
LIMITED BY PACKAGE
30
25
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 12. Maximum Drain Current Vs.
Case Temperature
www.irf.com
www.DataSheet.in

6 Page



ページ 合計 : 9 ページ
 
PDF
ダウンロード
[ IRHLNJ77034 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRHLNJ77034

RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap