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PDF IRF7750GPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7750GPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
PD-96144A
IRF7750GPbF
HEXFET® Power MOSFET
VDSS = -20V
RDS(on) = 0.030Ω
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Interna-
tional Rectifier is well known for, provides the designer
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
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Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
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&
%
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TSSOP-8
Max.
-20
±4.7
±3.8
±38
1.0
0.64
0.008
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
1
05/14/09
www.DataSheet.in
1 page  
IRF7750GPbF
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
20
16
12
8
4
0
0.01
0.10 1.00 10.00
Time (sec)
100.00
Fig 10. Typical Power Vs. Time
1000
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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100
5
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| PDF Descargar | [ Datasheet IRF7750GPBF.PDF ] | |
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