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IRF7706GPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7706GPBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7706GPBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
PD-96143
IRF7706GPbF
HEXFET® Power MOSFET
VDSS
-30V
RDS(on) max
22mΩ@VGS = -10V
36mΩ@VGS = -4.5V
ID
-7.0A
-5.6A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
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TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-7.0
-5.7
-28
1.51
0.96
0.01
± 20
-55 to + 150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
83
Units
°C/W
1
04/21/08
www.DataSheet.in
1 Page IRF7706GPbF
100
VGS
TOP
-10V
-4.5V
-3.7V
-3.5V
-3.3V
10
-3.0V
-2.7V
BOTTOM -2.5V
1
-2.5V
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
-10V
-4.5V
-3.7V
-3.5V
-3.3V
10
-3.0V
-2.7V
BOTTOM -2.5V
-2.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10 TJ = 150° C
TJ = 25°C
1
0.1
2.0
V DS= -15V
20µs PULSE WIDTH
2.5 3.0 3.5 4.0 4.5 5.0
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -7.0A
1.5
1.0
0.5
0.0 VGS = -10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
www.DataSheet.in
3Pages IRF7706GPbF
0.060
0.040
0.020
ID = -7.0A
0.100
0.080
0.060
0.040
0.020
VGS = -4.5V
VGS = -10V
0.000
2.0
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.000
0
5 10 15 20 25 30 35 40 45 50 55 60
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com
www.DataSheet.in
6 Page | |||
ページ | 合計 : 8 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF7706GPBF | Power MOSFET ( Transistor ) | International Rectifier |