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IRAM136-3023BのメーカーはInternational Rectifierです、この部品の機能は「Integrated Power Hybrid IC」です。 |
部品番号 | IRAM136-3023B |
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部品説明 | Integrated Power Hybrid IC | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRAM136-3023Bダウンロード(pdfファイル)リンクがあります。 Total 16 pages
PD-97270 RevA
IRAM136-3023B
Series
Integrated Power Hybrid IC for
Low Voltage Motor Applications
30A, 150V
with Internal Shunt Resistor
Description
International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt
Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light
industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a
single isolated package to simplify design.
This advanced HIC is a combination of IR's low RDS(on) Advance Planar MOSFET Super Rugged technology
and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced
package. A built-in temperature monitor and over-current and over-temperature protections and integrated
under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new
developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold
structure minimizes PCB space and resolves isolation problems to heatsink.
Features
• Integrated Gate Drivers
• Temperature Monitor and Protection
• Overcurrent shutdown
• Low RDS(on) Advance Planar Super Rugged Technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power up to 4.0kW / 48~100 Vdc
• Fully Isolated Package, Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter
Description
Value
Units
VBR(DSS)
V+
MOSFET Blocking Voltage
Positive Bus Input Voltage
150
V
100
IO @ TC=25°C
RMS Phase Current (Note 1)
30
IO @ TC=100°C
RMS Phase Current (Note 1)
15 A
IO Pulsed RMS Phase Current (Note 1 and 2)
56
FPWM
PWM Carrier Frequency
20 kHz
PD
Power Dissipation per MOSFET @ TC =25°C
89 W
VISO Isolation Voltage (1min)
2000
VRMS
TJ (MOSFET & IC)
Maximum Operating Junction Temperature
+150
TC Operating Case Temperature Range
-20 to +100
°C
TSTG Storage Temperature Range
-40 to +125
T Mounting Torque (M4 screw)
0.7 to 1.17
Nm
Note 1: Sinusoidal modulation at V+=100V, TJ=150°C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3
Note 2: tP<100ms; TC=25°C; FPWM=20kHz, limited by IBUS-TRIP, see Table "Inverter Section Electrical Characteristics"
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1 Page IRAM136-3023B
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Min
IBDF
Bootstrap Diode Peak Forward
Current
---
PBR Peak
Bootstrap Resistor Peak Power
(Single Pulse)
---
VS1,2,3
High side floating supply offset
voltage
VB1,2,3 - 25
Max
4.5
25.0
VB1,2,3 +0.3
Units Conditions
A
tP= 10ms,
TJ = 150°C, TC=100°C
W tP=100μs, TC =100°C
V
VB1,2,3
High side floating supply voltage -0.3
150 V
VCC
Low Side and logic fixed supply
voltage
-0.3
20 V
Lower of
VIN
Input voltage LIN, HIN, ITrip
-0.3 (VSS+15V) or V
VCC+0.3V
Inverter Section Electrical Characteristics @TJ= 25°C
Symbol
Parameter
Min Typ Max Units Conditions
V(BR)DSS
ƩV(BR)DSS / ƩT
Drain-to-Source Breakdown
Voltage
Temperature Coeff. Of
Breakdown Voltage
150 ---
---
V VIN=5V, ID=250μA
---
0.16
---
V/°C
VIN=5V, ID=1.0mA
(25°C - 150°C)
RDS(ON)
IDSS
Drain-to-Source On Resistance
Zero Gate Voltage Drain Current
---
---
---
---
38 80
ID=15A, VCC=15V
mƻ
65 122
ID=15A, VCC=15V, TJ=125°C
3 80
VIN=5V, V+=150V
NjA
8 ---
VIN=5V, V+=150V, TJ=125°C
VSD
Body Diode Forward Voltage
Drop
--- 1.2 1.9
--- 1.0 1.8
ID=15A
V
ID=15A, TJ=125°C
VBDFM
Bootstrap Diode Forward
Voltage Drop
-- -- 1.25
IF=1A
V
--- --- 1.10
IF=1A, TJ=125°C
RBR
Bootstrap Resistor Value
--- 22 ---
ƻ TJ=25°C
ƩRBR/RBR
Bootstrap Resistor Tolerance
--- --- ±5 % TJ=25°C
IBUS_TRIP
Current Protection Threshold
(positive going)
56 --- 68
A See Figure 2
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3Pages IRAM136-3023B
Thermal and Mechanical Characteristics
Symbol
Parameter
Min Typ Max
Rth(J-C)
Rth(C-S)
Thermal resistance, FET5/
Thermal resistance, C-S5/
--- 1.2 1.4
--- 0.1 ---
CD Creepage Distance
3.5 ---
---
5/ Based on Characterization Data only. Not subject to production test.
Units Conditions
Flat, greased surface. Heatsink
°C/W compound thermal conductivity
1W/m°K
mm See outline Drawings
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min Typ Max Units Conditions
RShunt
Resistance
8.1 8.3 8.5 mƻ TC = 25°C
TCoeff
Temperature Coefficient
0 --- 200 ppm/°C
PShunt
Power Dissipation
--- --- 4.5 W -40°C< TC <100°C
TRange
Temperature Range
-20 --- 125 °C
Internal NTC - Thermistor Characteristics
Parameter Definition
Min Typ
R25 Resistance
97 100
R125 Resistance6/
2.25 2.52
B
B-constant (25-50°C)6/
4165 4250
Temperature Range
-20 ---
Typ. Dissipation constant
---
6/ Verified by Design. Not subject to production test.
1
Max Units Conditions
103 kƻ TC = 25°C
2.80
4335
125
kƻ TC = 125°C
k R2 = R1e [B(1/T2 - 1/T1)]
°C
--- mW/°C TC = 25°C
Input-Output Logic Level Table
V+
Hin1,2,3
(13,14,15)
Lin1,2,3
(16,17,18)
Ho
IC
Driver
Lo
U,V,W
(2,5,8)
ITRIP HIN1,2,3 LIN1,2,3 U,V,W
0 0 1 V+
0100
011X
1XXX
6 www.irf.com
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6 Page | |||
ページ | 合計 : 16 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRAM136-3023B | Integrated Power Hybrid IC | International Rectifier |