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PDF IXFR40N90P Data sheet ( Hoja de datos )
| Número de pieza | IXFR40N90P | |
| Descripción | Polar Power MOSFET HiPerFET | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFR40N90P
VDSS = 900V
ID25 = 21A
≤RDS(on) 230mΩ
trr ≤ 300ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
900
900
± 30
± 40
V
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
21
80
20
1.5
15
300
-55 ... +150
150
-55 ... +150
A
A
A
J
V/ns
W
°C
°C
°C
Maximum lead temperature for soldering
Plastic body for 10s
50/60 Hz, RMS, 1 minute
300
260
2500
°C
°C
V~
Mounting force
20..120/4.5..27
N/lb.
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 20A, Note 1
Characteristic Values
Min. Typ. Max.
900 V
3.5 6.5 V
± 100 nA
50 μA
3.5 mA
230 mΩ
ISOPLUS247
E153432
Isolated Tab
G = Gate D = Drain
S = Source
Fearures
z Silicon chip on Direct-Copper Bond
(DCB) substrate
z Isolated mounting surface
z 2500V electrical isolation
z Fast intrinsic diode
z Avalanche rated
z Low package inductance
Advantages
z Low gate drive requirement
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor drives
z Robotics and servo controls
© 2008 IXYS CORPORATION, All rights reserved
www.DataSheet.in
DS100063(10/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFR40N90P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXFR40N90P | Polar Power MOSFET HiPerFET | IXYS Corporation |
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