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PDF IXFR180N10 Data sheet ( Hoja de datos )
| Número de pieza | IXFR180N10 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Back Surface)
Single MOSFET Die
IXFR 180N10
VDSS = 100 V
ID25 = 165 A
RDS(on) = 8 mW
trr £ 250 ns
Preliminary data
Symbol
VDSS
V
DGR
VGS
V
GSM
I
D25
ID(RMS)
I
DM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Weight
Symbol
V
DSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T
C
= 25°C (MOSFET chip capability)
External lead (current limit)
T
C
= 25°C, Note 1
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
100 V
100 V
±20 V
±30 V
165 A
76 A
720 A
180 A
60 mJ
3J
5 V/ns
400
-55 ... +150
150
-55 ... +150
300
2500
5
W
°C
°C
°C
°C
V~
g
Test Conditions
V = 0 V, I = 3mA
GS D
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
V =0V
GS
VGS = 10 V, ID = 90A
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
100 V
2.0 4.0 V
±100 nA
TJ = 25°C
T
J
= 125°C
100 mA
2 mA
8 mW
ISOPLUS 247TM
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<25pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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