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IXFH24N90PのメーカーはIXYS Corporationです、この部品の機能は「Polar Power MOSFET HiPerFET」です。 |
部品番号 | IXFH24N90P |
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部品説明 | Polar Power MOSFET HiPerFET | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFH24N90Pダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH24N90P
IXFT24N90P
VDSS = 900V
ID25 = 24A
≤RDS(on) 420mΩ
trr ≤ 300ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
900
900
± 30
± 40
24
48
12
1
V
V
V
V
A
A
A
J
15
660
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
300 °C
260 °C
1.13/10
6
4
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
900 V
3.5 6.5 V
± 200 nA
25 μA
2 mA
420 mΩ
TO-247 (IXFH)
TAB
TO-268 (IXFT)
GS
TAB
G = Gate D = Drain
S = Source TAB = Drain
Features
z International standard packages
z Avalanche Rated
z Low package inductance
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor drives
z Robotics and servo controls
© 2008 IXYS CORPORATION, All rights reserved
www.DataSheet.in
DS100059(10/08)
1 Page 24
22
20
18
16
14
12
10
8
6
4
2
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
12345678
VDS - Volts
9 10
Fig. 3. Output Characteristics
@ 125ºC
24
22 VGS = 10V
9V
20
18
16 8V
14
12
10 7V
8
6
4 6V
2 5V
0
0 2 4 6 8 10 12 14 16 18 20 22 24
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 12A Value
vs. Drain Current
2.8
2.6 VGS = 10V
2.4
TJ = 125ºC
2.2
2.0
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
0 4 8 12 16 20 24 28 32 36 40 44 48
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
www.DataSheet.in
IXFH24N90P
IXFT24N90P
50
45
40
35
30
25
20
15
10
5
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
3 6 9 12 15 18 21 24 27
VDS - Volts
30
Fig. 4. RDS(on) Normalized to ID = 12A Value
vs. Junction Temperature
3.2
3.0 VGS = 10V
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
I D = 24A
0 25 50 75
TJ - Degrees Centigrade
I D = 12A
100 125
150
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXFH24N90P | Polar Power MOSFET HiPerFET | IXYS Corporation |