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IXFB52N90P の電気的特性と機能

IXFB52N90PのメーカーはIXYS Corporationです、この部品の機能は「Polar Power MOSFET HiPerFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFB52N90P
部品説明 Polar Power MOSFET HiPerFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFB52N90P Datasheet, IXFB52N90P PDF,ピン配置, 機能
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB52N90P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Maximum Ratings
900 V
900 V
± 30 V
± 40 V
52 A
104 A
26 A
2J
20 V/ns
1250
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
30..120/6.7..27
N/lb.
10 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
900 V
3.5 6.5 V
± 200 nA
50 μA
4 mA
160 mΩ
VDSS =
ID25 =
RDS(on)
trr
900V
52A
160mΩ
300ns
PLUS264TM
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z Fast Intrinsic Diode
z Avalanche Rated
z Low Package Inductance
Advantages
z Plus 264TM Package for Clip or Spring
Mounting
z Space Savings
z High Power Density
Applications
z Switched-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor drives
z Robotics and Servo Controls
© 2009 IXYS CORPORATION, All Rights Reserved
www.DataSheet.in
DS100064A(02/09)

1 Page





IXFB52N90P pdf, ピン配列
55
50
45
40
35
30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
12345678
VDS - Volts
9
Fig. 3. Output Characteristics
@ 125ºC
55
50
VGS = 10V
9V
45
40
35 8V
30
25
20
15 7V
10
5 6V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 26A Value
vs. Drain Current
2.8
2.6 VGS = 10V
2.4
TJ = 125ºC
2.2
2.0
1.8
1.6
1.4
1.2
1.0 TJ = 25ºC
0.8
0
10 20 30 40 50 60 70 80 90
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
www.DataSheet.in
IXFB52N90P
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
5 10 15 20 25
VDS - Volts
30
Fig. 4. RDS(on) Normalized to ID = 26A Value
vs. Junction Temperature
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
VGS = 10V
I D = 52A
I D = 26A
-25 0
25 50 75 100 125
TJ - Degrees Centigrade
150
60
55
50
45
40
35
30
25
20
15
10
5
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0
25 50 75 100 125
TC - Degrees Centigrade
150


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部品番号部品説明メーカ
IXFB52N90P

Polar Power MOSFET HiPerFET

IXYS Corporation
IXYS Corporation


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