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TGS4301-EPUのメーカーはTriQuint Semiconductorです、この部品の機能は「High Power Ka-Band Absorptive SPDT Switch」です。 |
部品番号 | TGS4301-EPU |
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部品説明 | High Power Ka-Band Absorptive SPDT Switch | ||
メーカ | TriQuint Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとTGS4301-EPUダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Advance Product Information
January 28, 2003
Wideband mmWave VPIN SPDT Switch TGS4301-EPU
Key Features
• 24-43 GHz High Isolation SPDT
• < 2 dB Typical Insertion Loss
• -10dB Typical Return Loss
• On-Chip Bias resistors
• Flexible Bias Pad Configuration
• Reflective Switch Design
• Integrated DC Blocks on RF Pads
• 2.164 x 1.055 x 0.1 mm (2.283 mm2)
Fixtured Measured Performance
0
-1
-2
-3
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Radio
• Ka Band VSAT
• LMDS
-4
-5
24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
-30
-35
-40
-45
-50
-55
-60
24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
www.DataSheet.in
1
1 Page Advance Product Information
January 28, 2003
TGS4301-EPU
Measured Fixtured Data
Bias Conditions: Vcontrol=±5 V, I+=22 mA
0
-1
-2
-3
-4
-5
24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
-30
-35
-40
-45
-50
-55
-60
24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
www.DataSheet.in
3
3Pages Advance Product Information
January 28, 2003
TGS4301-EPU
MMIC Carrier Plate Assembly Drawing
Notes:
1. For biasing flexibility, two sets of bias pads are available for each branch.
-Control Lines ±5V (VC2 or VC4, VB1 or VB4) use on-chip resistors for diode current
control.
-Auxiliary pads (VC1 or VC3, VB2 or VB3) can be used if connected to a 20mA current
source.
2. Positive biasing with both VC2 and VC4 or VB1 and VB4 may increase the switch’s isolation
at the expense of higher dissipated power.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
www.DataSheet.in
6
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ TGS4301-EPU データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
TGS4301-EPU | High Power Ka-Band Absorptive SPDT Switch | TriQuint Semiconductor |