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H9N03LA PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H9N03LA
部品説明 IPDH9N03LA
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 



Total 10 pages
		

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H9N03LA Datasheet, H9N03LA PDF,ピン配置, 機能
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPDH9N03LA G IPSH9N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
9.2 m
30 A
Type
IPDH9N03LA G
IPSH9N03LA G
Package
Marking
PG-TO252-3-11
H9N03LA
PG-TO251-3-11
H9N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=30 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.0
page 1
www.DataSheet.in
Value
30
30
210
80
6
±20
52
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-15

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