BGA2865 Datasheet PDF - NXP Semiconductors
| Part Number | BGA2865 | |
| Description | MMIC Wideband Amplifier | |
| Manufacturers | NXP Semiconductors | |
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BGA2865
MMIC wideband amplifier
Rev. 1 — 17 August 2010
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features
Input internally matched to 50 Ω
A gain of 32.2 dB at 950 MHz
Output power at 1 dB gain compression = 8 dBm
Supply current = 29.9 mA at a supply voltage of 5 V
Reverse isolation > 34 dB up to 2 GHz
Good linearity with low second order and third order products
Noise figure = 3.9 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
Table 1.
Pin
1
2, 5
3
4
6
Pinning
Description
VCC
GND2
RF_OUT
GND1
RF_IN
Simplified outline Graphic symbol
654
1
63
123
4 2, 5
sym052
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NXP Semiconductors
8.2 Graphs
BGA2865
MMIC wideband amplifier
135° +0.5
90°
+1
+ 0.2
0
180°
0.2
− 0.2
(3)
0.5
1
(2)
2
(1)
+2 45°
+5
5 10
0°
−5
1.0
0.8
0.6
0.4
0.2
0
−135° −0.5
−1
− 90°
−2
− 45°
001aam310
Tamb = 25 °C; ICC = 25.6 mA; VCC = 5.0 V; Z0 = 50 Ω.
(1) f = 250 MHz
(2) f = 950 MHz
(3) f = 2150 MHz
Fig 4. Input reflection coefficient (S11); typical values
1.0
BGA2865
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 August 2010
© NXP B.V. 2010. All rights reserved.
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| Information | Total 18 Pages | |
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