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PDF IRLR014PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLR014PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
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IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 5.0 V
8.4
3.5
6.0
Single
0.20
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRLR014/SiHLR014)
• Straight Lead (IRLU014/SiHLU014)
• Available in Tape and Reel
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
SnPb
Note
a. See device orientation.
IRLR014PbF
SiHLR014-E3
IRLR014
SiHLR014
DPAK (TO-252)
IRLR014TRPbFa
SiHLR014T-E3a
IRLR014TRa
SiHLR014Ta
DPAK (TO-252)
IRLR014TRLPbFa
SiHLR014TL-E3a
IRLR014TRLa
SiHLR014TLa
IPAK (TO-251)
IRLU014PbF
SiHLU014-E3
IRLU014
SiHLU014
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 924 µH, RG = 25 Ω, IAS = 7.7 A (see fig. 12).
c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
60
± 10
7.7
4.9
31
0.20
0.020
47
25
2.5
4.5
- 55 to + 150
260d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91321
S-Pending-Rev. A, 21-Jul-08
WORK-IN-PROGRESS
www.vishay.com
1
1 page  
www.DataSheet.in
IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
RG
RD
D.U.T.
5V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91321
S-Pending-Rev. A, 21-Jul-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLR014PBF.PDF ] | |
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