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IRLU014NのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRLU014N |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLU014Nダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet.in
PD- 94350
IRLR/U014N
HEXFET® Power MOSFET
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
G
D
VDSS = 55V
RDS(on) = 0.14Ω
ID = 10A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
TO-252AA
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
10
7.1
40
28
0.2
± 16
35
6.0
2.8
5.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
–––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
5.3
50
110
I-Pak
TO-251AA
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
5/4/99
1 Page www.DataSheet.in
100
10
TOTOPP
V11V52G11VVG05SVSV
105V.0V
7.40.V5V
5.30.V5V
4.35.V0V
2.27.V7V
BBOOTTTTOOMM22.0.V5V
IRLR/U014N
100
10
VVGGSS
TTOOPP 1155VV
1120VV
150.0VV
74..05VV
53..05VV
43..50VV
22..77VV
BBOOTTTTOOMM22..05VV
1
0.1
0.1
2.5V
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1 2.5V
0.1
0.1
20µs PULSE WIDTH
TJ= 175 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 175° C
10
1
0.1
2.0
V DS= 50V
20µs PULSE WIDTH
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 10A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages www.DataSheet.in
IRLR/U014N
15V
VDS
L
DRIVER
RG
2100VV
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
60
ID
TOP
2.4A
50 5.0A
BOTTOM 6.0A
40
30
20
10
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRLU014 | HEXFET POWER MOSFET | International Rectifier |
IRLU014 | Power MOSFET ( Transistor ) | Vishay Siliconix |
IRLU014N | HEXFET Power MOSFET | International Rectifier |
IRLU014N | HEXFET Power MOSFET | International Rectifier |