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PDF IRF8010S Data sheet ( Hoja de datos )
| Número de pieza | IRF8010S | |
| Descripción | SMPS MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 94573
SMPS MOSFET
Applications
l High frequency DC-DC converters
IRF8010S
IRF8010L
HEXFET® Power MOSFET
l UPS and Motor Control
VDSS RDS(on) max
ID
Benefits
l Low Gate-to-Drain Charge to Reduce
100V
15mΩ
80A
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Typical RDS(on) = 12mΩ
D2Pak
IRF8010S
TO-262
IRF8010L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
gRθJC
Junction-to-Case
Junction-to-Case (end of life)
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
jJunction-to-Ambient (PCB Mount, steady state)
Max.
80i
57
320
260
1.8
± 20
16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
0.50
–––
Max.
0.57
0.80
–––
40
Notes through are on page 8
www.irf.com
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
1
01/28/03
1 page  
www.DataSheet.in
80
LIMITED BY PACKAGE
60
40
20
0
25 50 75 100 125 150 175
TC, Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF8010S/IRF8010L
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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