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W14NC50 の電気的特性と機能

W14NC50のメーカーはSTMicroelectronicsです、この部品の機能は「 STW14NC50」です。


製品の詳細 ( Datasheet PDF )

部品番号 W14NC50
部品説明 STW14NC50
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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W14NC50 Datasheet, W14NC50 PDF,ピン配置, 機能
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STW14NC50
N-CHANNEL 500V - 0.31- 14A TO-247
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STW14NC50
500V
< 0.38
14 A
s TYPICAL RDS(on) = 0.31
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
Unit
500 V
500 V
±30 V
14 A
8.7 A
56 A
190 W
1.5 W/°C
3.5 V/ns
–65 to 150
°C
150 °C
(1)ISD 14A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
May 2001
1/8

1 Page





W14NC50 pdf, ピン配列
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250V, ID = 7 A
RG = 4.7, VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 14 A,
VGS = 10V, RG = 4.7
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 400V, ID = 14 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 14 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 14 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
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STW14NC50
Min.
Typ.
20
23
75
10
38
Max.
90
Unit
ns
ns
nC
nC
nC
Min.
Typ.
25
30
62
Max.
Unit
ns
ns
ns
Min.
Typ.
670
6.7
20
Max.
14
56
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8


3Pages


W14NC50 電子部品, 半導体
STW14NC50
Fig. 1: Unclamped Inductive Load Test Circuit
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Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page



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部品番号部品説明メーカ
W14NC50

STW14NC50

STMicroelectronics
STMicroelectronics


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