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PDF IRGP4065DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4065DPBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
www.DaPtaDShe-et947U1.co0m1
IRGP4065DPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for Improved Panel Efficiency
l High Repetitive Peak Current Capability
l Lead Free Package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C c
TJ max
300
1.75
205
150
CC
V
V
A
°C
G
E
n-channel
E
C
G
TO-247AC
G
G a te
C
C o lle c to r
E
Em itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT) d
Thermal Resistance Junction-to-Case-(each Diode) d
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount) d
Weight
Max.
±30
70
40
205
160
63
1.3
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
1.45
0.24
–––
6.0 (0.21)
Max.
0.80
2.5
–––
40
–––
Units
V
A
W
W/°C
°C
N
Units
°C/W
g (oz)
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1
6/13/06
1 page  
IRGP4065DPbFwww.DataSheet4U.com
100000
10000
1000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
25
IC = 25A
20
VCE = 240V
15
VCE = 200V
VCE = 150V
10
100
Coes
Cres
10
0
50 100 150 200 250
VCE, Collector-toEmitter-Voltage(V)
300
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
1
5
0
0 10 20 30 40 50 60 70 80
Q G, Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
τJ τJ
τ1 τ1
R1R1
CiC= iτi/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.146 0.000131
τ3τ3 0.382 0.001707
0.271 0.014532
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
1
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
PDM
Notes:
1. Duty factor D = t1/ t2
t1
t2
.
0.01
0.00001
0.0001
0.001
2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.1
1
t1, Rectangular Pulse Duration (Seconds)
.
10
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case (DIODE)
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| PDF Descargar | [ Datasheet IRGP4065DPBF.PDF ] | |
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