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STP13NK60ZFP の電気的特性と機能

STP13NK60ZFPのメーカーはST Microelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP13NK60ZFP
部品説明 N-channel Power MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP13NK60ZFP Datasheet, STP13NK60ZFP PDF,ピン配置, 機能
STB13NK60Z - STB13NK60Z-1
STP13NK60Z/FP - STW13NK60Z
N-CHANNEL 600V - 0.48- 13A - TO-220/FP - D²/I²PAK - TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB13NK60Z-1
STB13NK60Z
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
600 V
600 V
600 V
600 V
600 V
<0.55
<0.55
<0.55
<0.55
<0.55
ID
13 A
13 A
13 A
13 A
13 A
Pw
150 W
150 W
35 W
150 W
150 W
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES
DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
Order codes
Package
3
2
1
TO-220
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-247
3
1
D²PAK
Internal schematic diagram
Sales Type
STB13NK60Z-1
STB13NK60ZT4
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
September 2005
Marking
B13NK60Z-1
B13NK60Z
P13NK60ZFP
P13NK60Z
W13NK60Z
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
TUBE
TAPE & REEL
TUBE
TUBE
TUBE
Rev 2
1/17
www.st.com
17

1 Page





STP13NK60ZFP pdf, ピン配列
STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z 2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 1 mA, VGS= 0
VDS = Max Rating,
VDS = Max Rating,Tc=125°C
VGS = ±20 V
VDS= VGS, ID = 100 µA
VGS= 10 V, ID= 4.5 A
Min.
600
3
Typ.
3.75
0.48
Max.
1
50
±10
4.5
0.55
Unit
V
µA
µA
µA
V
Table 5. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Forward Transconductance VDS =8V, ID = 5 A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V, ID = 10A
VGS =10V
(see Figure 19)
Min.
Typ.
11
2030
210
48
Max.
Unit
S
pF
pF
pF
125 pF
66 92 nC
11 nC
33 nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=300 V, ID= 5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=300 V, ID= 5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=480 V, ID= 10A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Min. Typ. Max. Unit
22 ns
14 ns
61 ns
12 ns
10 ns
9 ns
20 ns
3/17


3Pages


STP13NK60ZFP 電子部品, 半導体
2 Electrical characteristics STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
Figure 7. Output Characteristics
Figure 8. Transfer Characteristics
Figure 9. Transconductance
Figure 10. Static Drain-Source on Resistance
Figure 11. Gate Charge vs Gate -Source
Voltage
Figure 12. Capacitance Variations
6/17

6 Page



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部品番号部品説明メーカ
STP13NK60ZFP

N-channel Power MOSFET

ST Microelectronics
ST Microelectronics


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