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13N50CのメーカーはFairchild Semiconductorです、この部品の機能は「FQB13N50C」です。 |
部品番号 | 13N50C |
| |
部品説明 | FQB13N50C | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと13N50Cダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
FQB13N50C/FQI13N50C
500V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge ( typical 43nC)
• Low Crss ( typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQB13N50C / FQI13N50C
500
13
8
52
± 30
860
13
19.5
4.5
195
1.56
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minium pad size recommended (PCB Mount).
Typ Max
-- 0.64
-- 40
-- 62.5
©2003 Fairchild Semiconductor Corporation
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. A, October 2003
1 Page Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
VGS = 10V
1.0
VGS = 20V
0.5
※ Note : TJ = 25℃
0 5 10 15 20 25 30 35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
www.DataSheet4U.com
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
V , Source-Drain voltage [V]
SD
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
DS
10
V = 250V
DS
8 VDS = 400V
6
4
2
※ Note : ID = 13A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, October 2003
3Pages www.DataSheet4U.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
6 Page | |||
ページ | 合計 : 9 ページ | ||
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