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IXDN502 の電気的特性と機能

IXDN502のメーカーはIXYSです、この部品の機能は「(IXDx502) 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXDN502
部品説明 (IXDx502) 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
メーカ IXYS
ロゴ IXYS ロゴ 




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IXDN502 Datasheet, IXDN502 PDF,ピン配置, 機能
www.DataSheet4U.com
IXDF502 / IXDI502 / IXDN502
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected up to 2 Amps
• High 2A Peak Output Current
• Wide Operating Range: 4.5V to 30V
-55°C to +125°C Extended Operating
Temperature
• High Capacitive Load
Drive Capability: 1000pF in <10ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Power Charge Pumps
General Description
The IXDF502, IXDI502 and IXDN502 each consist of two 2-
Amp CMOS high speed MOSFET Gate Drivers for driving
the latest IXYS MOSFETs & IGBTs. Each of the Dual
Outputs can source and sink 2 Amps of Peak Current while
producing voltage rise and fall times of less than 15ns. The
input of each Driver is TTL or CMOS compatible and is
virtually immune to latch up. Patented* design innovations
eliminate cross conduction and current "shoot-through".
Improved speed and drive capabilities are further enhanced
by very quick & matched rise and fall times.
The IXDF502 is configured with one Gate Driver Inverting
plus one Gate Driver Non-Inverting. The IXDI502 is config-
ured as a Dual Inverting Gate Driver, and the IXDN502 is
configured as a Dual Non-Inverting Gate Driver.
The IXDF502, IXDI502 and IXDN502 are each available in
the 8-Pin P-DIP (PI) package, the 8-Pin SOIC (SIA) pack-
age, and the 6-Lead DFN (D1) package, (which occupies
less than 65% of the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number Description
IXDF502PI
IXDF502SIA
IXDF502SIAT/R
IXDF502D1
IXDF502D1T/R
IXDI502PI
IXDI502SIA
IXDI502SIAT/R
IXDI502D1
IXDI502D1T/R
IXDN502PI
IXDN502SIA
IXDN502SIAT/R
IXDN502D1
IXDN502D1T/R
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
Package
Type
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
6-Lead DFN
6-Lead DFN
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
6-Lead DFN
6-Lead DFN
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
6-Lead DFN
6-Lead DFN
Packing Style
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Pack
Qty
50
94
2500
56
2500
50
94
2500
56
2500
50
94
2500
56
2500
Configuration
Dual, with one
Driver Inverting
and one Driver
Non-Inverting
Dual, with both
Drivers
Inverting
Dual, with both
Drivers Non-
Inverting
NOTE: All parts are lead-free and RoHS Compliant
Copyright © 2007 IXYS CORPORATION All rights reserved
First Release
DS99573B(03/10)

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IXDN502 pdf, ピン配列
Absolute Maximum Ratings (1)
Parameter
Supply Voltage
All Other Pins
Junction Temperature
Storage Temperature
Lead Temperature (10 Sec)
Value
35V
-0.3 V to VCC + 0.3V
150 °C
-65 °C to 150 °C
300 °C
IXDF502 / IXDI502 / IXDN502www.DataSheet4U.com
Operating Ratings (2)
Parameter
Value
Operating Supply Voltage
4.5V to 30V
Operating Temperature Range
-55 °C to 125 °C
Package Thermal Resistance *
8-PinPDIP
8-PinSOIC
6-Lead DFN
6-Lead DFN
6-Lead DFN
(PI)
(SIA)
(D1)
(D1)
(D1)
θJ-A (typ) 125 °C/W
θJ-A(typ) 200 °C/W
θJ-A(typ) 125-200 °C/W
θJ-C(max) 3.3 °C/W
θJ-S(typ) 7.3 °C/W
Electrical Characteristics @ TA = 25 oC (3)
Unless otherwise noted, 4.5V VCC 30V .
All voltage measurements with respect to GND. IXD_502 configured as described in Test Conditions. All specifications are for one channel.
Symbol
VIH
VIL
VIN
IIN
VOH
VOL
ROH
ROL
IPEAK
IDC
tR
tF
tONDLY
tOFFDLY
VCC
ICC
Parameter
High input voltage
Low input voltage
Input voltage range
Input current
High output voltage
Low output voltage
High state output
resistance
Low state output
resistance
Peak output current
Continuous output current
Rise time
Fall time
On-time propagation delay
Off-time propagation delay
Power supply voltage
Power supply current
Test Conditions
4.5V VCC 18V
4.5V VCC 18V
0V VIN VCC
VCC = 15V
VCC = 15V
VCC = 15V
CLOAD =1000pF VCC =15V
CLOAD =1000pF VCC =15V
CLOAD =1000pF VCC =15V
CLOAD =1000pF VCC =15V
VIN = 3.5V
VIN = 0V
VIN = +VCC
Min
3.0
-5
-10
VCC - 0.025
4.5
Typ(4)
Max
0.8
VCC + 0.3
10
0.025
Units
V
V
V
µA
V
V
2.5 4
2 3
2A
1A
7.5 10 ns
6.5 9 ns
25 32 ns
20 30 ns
15 30 V
1 3 mA
0 15 µA
15 µA
IXYS reserves the right to change limits, test conditions, and dimensions.
3


3Pages


IXDN502 電子部品, 半導体
Fig. 5
80
70
60
50
40
30
20
10
0
0
Fig. 7
12
10
8
6
4
2
0
-50
IXDF502 / IXDI502 / IXDN502www.DataSheet4U.com
Typical Performance Characteristics
Rise Time vs. Supply Voltage
Fig. 6
70
Fall Time vs. Supply Voltage
60
10000pF
50
10000pF
40
5400pF
1000pF
560pF
5 10 15 20 25 30 35 40
Supply Voltage (V)
Rise / Fall Time vs. Temperature
VSUPPLY = 15V CLOAD = 1000pF
Rise time
Fall time
0 50 100
Temperature (C)
150
30
20
10
0
0
Fig. 8
90
80
70
60
50
40
30
20
10
0
100
5400pF
1000pF
560pF
5 10 15 20 25 30 35 40
Supply Voltage (V)
Rise Time vs. Capacitive Load
5V
10V
15V
20V
1000
Load Capacitance (pF)
10000
Fig. 9
70
60
Fall Time vs. Capacitive Load
5V
50 10V
15V
20V
40
30
20
10
0
100 1000 10000
Load Capacitance (pF)
Copyright © 2007 IXYS CORPORATION All rights reserved
Fig. 10
Input Threshold Levels vs. Supply Voltage
2.5
2
Positive going
input
1.5
Negative going
1 input
0.5
0
0
6
10 20 30
Supply Voltage (V)
40

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IXDN502

(IXDx502) 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers

IXYS
IXYS
IXDN50N120AU1

High Voltage IGBT with Diode

IXYS
IXYS


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