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IRLML0100TRPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRLML0100TRPBF |
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部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLML0100TRPBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
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PD - 97157
IRLML0100TRPbF
HEXFET® Power MOSFET
VDS
VGS Max
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
100 V
± 16
V
220 m:
235 m:
G1
S2
3D
Micro3TM (SOT-23)
IRLML0100TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1
Benefits
results in
⇒
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJA
RθJA
Parameter
eJunction-to-Ambient
fJunction-to-Ambient (t<10s)
Max.
100
1.6
1.3
7.0
1.3
0.8
0.01
± 16
-55 to + 150
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
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Units
V
A
W
W/°C
V
°C
Units
°C/W
1
11/24/09
1 Page www.DataSheet4U.com
IRLML0100TRPbF
100
≤60µs PULSE WIDTH
Tj = 25°C
10
1
TOP
BOTTOM
VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
0.1
0.01
0.1
2.25V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
≤60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
1
2.25V
0.1
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
1 TJ = 150°C
0.1 TJ = 25°C
VDS = 50V
≤60µs PULSE WIDTH
0.01
1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5
ID = 1.6A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages www.DataSheet4U.com
IRLML0100TRPbF
600
550
500
450
400
350
300
250
200
150
2
ID = 1.6A
TJ = 125°C
TJ = 25°C
468
VGS, Gate -to -Source Voltage (V)
10
Fig 12. Typical On-Resistance Vs. Gate
Voltage
270
250
Vgs = 4.5V
230
Vgs = 10V
210
190
170
0
246
ID, Drain Current (A)
8
Fig 13. Typical On-Resistance Vs. Drain
Current
Id
Vgs
Vds
Vgs(th)
0
Qgodr
Qgd Qgs2 Qgs1
Fig 14a. Basic Gate Charge Waveform
6
G
210K
L
D
DUT
S
VCC
Fig 14b. Gate Charge Test Circuit
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6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRLML0100TRPBF | HEXFET Power MOSFET | International Rectifier |