|
|
PDF IRLML0030TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRLML0030TRPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRLML0030TRPBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
VDS
VGS Max
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
30
± 20
27
40
V
V
mΩ
mΩ
PD - 96278B
IRLML0030TRPbF
HEXFET® Power MOSFET
G1
S2
3D
Micro3TM (SOT-23)
IRLML0030TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Features
Low RDS(on) ( ≤ 27mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
⇒ Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
Max.
30
5.3
4.3
21
1.3
0.8
0.01
± 20
-55 to + 150
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient
fRθJA Junction-to-Ambient (t<10s)
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
02/29/12
1 page  
IRLML0030TRPbF
6
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
150
1000
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.01
0.001
1E-006
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRLML0030TRPBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRLML0030TRPBF | HEXFET Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |