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PDF IRLML9301TRPBF Data sheet ( Hoja de datos )

Número de pieza IRLML9301TRPBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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VDS
VGS Max
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
-30
± 20
64
103
V
V
m
m
PD - 96310
IRLML9301TRPbF
HEXFET® Power MOSFET
*
'
6  Micro3TM (SOT-23)
IRLML9301TRPbF
Application(s)
System/Load Switch
Features and Benefits
Features
Low RDS(on) ( 64m)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
Increased reliability
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
VGS
TJ, TSTG
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient
fRθJA Junction-to-Ambient (t<10s)
Max.
-30
-3.6
-2.9
-15
1.3
0.8
0.01
± 20
-55 to + 150
Typ.
–––
–––
Max.
100
99
Units
V
A
W
W/°C
V
°C
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
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1
05/27/10

1 page




IRLML9301TRPBF pdf
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IRLML9301TRPbF
4.2
3.6
3
2.4
1.8
1.2
0.6
0
25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
150
1000
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.01
0.001
1E-006
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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