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N04L163WC1C の電気的特性と機能

N04L163WC1CのメーカーはNanoAmp Solutionsです、この部品の機能は「4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit」です。


製品の詳細 ( Datasheet PDF )

部品番号 N04L163WC1C
部品説明 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
メーカ NanoAmp Solutions
ロゴ NanoAmp Solutions ロゴ 




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N04L163WC1C Datasheet, N04L163WC1C PDF,ピン配置, 機能
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N04L163WC1C
Advance wInwwfo.DramtaShaeetti4oU.ncom
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
Features
The N04L163WC1C is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N04L163WC1C is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
• Ultra Low Power Sort Available
Part Number
N04L163WC1CZ1
N04L163WC1CT1
Package Type
VFBGA Pb-Free
44-TSOP II Pb-Free
Operating
Power
Temperature Supply (Vcc)
-40oC to +85oC 2.2V - 3.6V
Speed
Options
55ns
Standby Operating
Current
Current
(ISB), Typical (Icc), Typical
2 µA
1.5 mA @
1MHz
Pin Configurations
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44 A5
43 A6
42 A7
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 VSS
33 VCC
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 NC
27 A8
26 A9
25 A10
24 A11
23 A12
123456
A LB OE A0 A1 A2 NC
B I/O8 UB A3 A4 CE I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 DNU A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
48 Pin VFBGA (top)
6 x 8 mm
Pin Descriptions
Pin Name
A0-A17
WE
CE
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
DNU
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Do Not Use
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1

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N04L163WC1C pdf, ピン配列
NanoAmp Solutions, Inc.
N04L163WC1C
Advance wInwfwo.DramtaShaeteti4oUn.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4.5
500
–65 to 150
-40 to +85
260oC, 10sec
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min. Typ1 Max Unit
Supply Voltage
VCC
2.2 3.0 3.6 V
Data Retention Voltage
VDR
Chip Disabled
1.5
V
Input High Voltage
VIH
Vcc = 2.2V to 2.7V
Vcc = 2.7V to 3.6V
1.8
2.2
VCC+0.3
VCC+0.3
V
Input Low Voltage
VIL
Vcc = 2.2V to 2.7V
Vcc = 2.7V to 3.6V
-0.3
-0.3
0.6
0.8
V
Output High Voltage
VOH
IOH = -0.1mA, Vcc = 2.20V
IOH = -1.0mA, Vcc = 2.70V
2.0
2.4
V
Output Low Voltage
VOL
IOL = 0.1mA, Vcc = 2.20V
IOL = 2.1mA, Vcc = 2.70V
0.4
V
0.4
Input Leakage Current
ILI
VIN = 0 to VCC -1 1 µA
Output Leakage Current
ILO
OE = VIH or Chip Disabled
VOUT = 0 to VCC
-1
1 µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
-L
1.5
1.5
3.0
3.0
mA
Read/Write Operating Supply Current
@ fmax
ICC2
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
-L
8
8
15.0
10.0
mA
Maximum Standby Current
VIN = VCC or 0V
ISB1
Chip Disabled
tA= 85oC, VCC = 3.6 V
-L
2.0 12
2.0 8 µA
Maximum Data Retention Current
IDR
Vcc = 1.5V, CE Vcc - 0.2V,
VIN Vcc - 0.2V or VIN 0.2V -L
9
6
µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3


3Pages


N04L163WC1C 電子部品, 半導体
NanoAmp Solutions, Inc.
N04L163WC1C
Advance wInwfwo.DramtaShaeteti4oUn.com
Timing Waveform of Write Cycle (WE control)
tWC
Address
CE
tAW
tCW
tLBW, tUBW
tWR
LB, UB
tAS
WE
tWP
tDW
tDH
Data In
High-Z
tWHZ
Data Valid
tOW
Data Out
High-Z
Timing Waveform of Write Cycle (CE Control)
tWC
Address
CE
LB, UB
tAW
tCW
tAS
tLBW, tUBW
tWR
tWP
WE
tDW tDH
Data In
Data Out
Data Valid
tLZ
tWHZ
High-Z
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6

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部品番号部品説明メーカ
N04L163WC1A

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

NanoAmp Solutions
NanoAmp Solutions
N04L163WC1C

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

NanoAmp Solutions
NanoAmp Solutions


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