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N02M0818L2A の電気的特性と機能

N02M0818L2AのメーカーはNanoAmp Solutionsです、この部品の機能は「2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit」です。


製品の詳細 ( Datasheet PDF )

部品番号 N02M0818L2A
部品説明 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
メーカ NanoAmp Solutions
ロゴ NanoAmp Solutions ロゴ 




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N02M0818L2A Datasheet, N02M0818L2A PDF,ピン配置, 機能
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02M0818L2Awww.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx8 bit
Overview
Features
The N02M0818L2A is an integrated memory
device intended for implanted life-support (Class 3)
medical applications. This device comprises a 2
Mbit Static Random Access Memory organized as
262,144 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
medical users. The base design is the same as
NanoAmp’s N02M0818L1A, which is intended for
non life-support (Class 1 and 2) medical
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. The
N02M0818L2A is optimal for various applications
where low-power is critical such as implanted
pacemaker devices. The device can operate over a
very wide temperature range of -20oC to +60oC
and is available in die form as well as in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
Product Family
• Single Wide Power Supply Range
1.3 to 2.3 Volts
• Very low standby current
200nA typical at 2.1V and 37 deg C
• Very low operating current
1 mA at 2.0V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.0V
• Automatic power down to standby mode
• TTL compatible three-state output driver
Part Number
Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
N02M0818L2AN 32 - STSOP I
N02M0818L2AD Known Good Die -20oC to +60oC
1.3V - 2.3V
100ns @ 1.65V
500ns @ 1.3V
Standby
Current
(ISB)
450nA @
2.3V
Operating
Current (Icc),
Max
2.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
Vcc 8
A17 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
N02M0818L2A
STSOP
32 OE
31 A10
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 Vss
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Pin Name
A0-A17
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N02M0818L2A pdf, ピン配列
NanoAmp Solutions, Inc.
N02M0818L2Awww.DataSheet4U.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 3.0
500
–40 to 125
-20 to +60
240oC, 10sec(Lead only)
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended Operating Limits (Not all inclusive values tested)1
Item
Symbol
Test Conditions
Min.
Max Unit
Core Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
Read/Write Operating Supply Current
@ 85 ns Cycle Time2
VCC
VDR
VIH
VIL
VOH
VOL
ILI
ILO
ICC1
ICC2
Standby Current3
ISB1
Data Retention Current3
IDR
1.3 2.3 V
Chip Disabled (Note 3)
1.0
V
IOH = 0.2mA
IOL = -0.2mA
VIN = 0 to VCC
OE = VIH or Chip Disabled
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VIN = VCC or 0V
Chip Disabled
tA= 37oC, VCC = 2.3 V
VCC = 1.0V, VIN = VCC or 0
Chip Disabled, tA= 85oC
0.7VCCQ VCCQ+0.5
–0.5 0.3VCCQ
VCCQ–0.3
0.3
0.1
0.1
2.5
13.0
450
1.0
V
V
V
V
µA
µA
mA
mA
nA
µA
1. These limits are the expected operating conditions for this device. Only selected points within this range of conditions
are specifically tested and guaranteed.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current
required to drive output capacitance expected in the actual system.
3. The chip is Disabled when CE1# is high or CE2 is low or UB# and LB# are high. The chip is Enabled when CE1# is
low and CE2 is high.
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3


3Pages


N02M0818L2A 電子部品, 半導体
NanoAmp Solutions, Inc.
N02M0818L2Awww.DataSheet4U.com
Timing Waveform of Write Cycle (WE control)
tWC
Address
tAW
tWR
CE1
tCW
CE2
WE
Data In
Data Out
tAS
High-Z
tWHZ
tWP
tDW tDH
Data Valid
tOW
High-Z
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
tAW
CE1
(for CE2 Control, use
inverted signal)
tAS
tCW
tWR
WE
Data In
Data Out
tWP
tDW tDH
Data Valid
tLZ tWHZ High-Z
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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部品番号部品説明メーカ
N02M0818L2A

2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

NanoAmp Solutions
NanoAmp Solutions


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