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N02L1618C1A の電気的特性と機能

N02L1618C1AのメーカーはNanoAmp Solutionsです、この部品の機能は「2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit」です。


製品の詳細 ( Datasheet PDF )

部品番号 N02L1618C1A
部品説明 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
メーカ NanoAmp Solutions
ロゴ NanoAmp Solutions ロゴ 




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N02L1618C1A Datasheet, N02L1618C1A PDF,ピン配置, 機能
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02L1618C1A
AdvancewIwnwf.oDartamShaeett4iUo.cnom
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx16 bit
Overview
Features
The N02L1618C1A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as
NanoAmp’s N02L163WN1A, which is processed to
operate at higher voltages. The device operates
with a single chip enable (CE) control and output
enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and
lower bytes to be accessed independently. The
N02L1618C1A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 128Kb x
16 SRAMs.
Product Family
• Single Wide Power Supply Range
1.65 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V (Typical)
• Very low operating current
1.4mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
N02L1618C1AB 48 - BGA
N02L1618C1AB2 Green 48-BGA
-40oC to +85oC 1.65V - 2.2V
N02L1618C1AT2 Green 44-TSOP2
N02L1618C1AT 44 - TSOP2
Speed
70/85ns @
1.65V
Standby
Operating
Current (ISB), Current (Icc),
Max Max
10 µA
3 mA @ 1MHz
(DOC# 14-02-012 REV B ECN# 01-1274)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N02L1618C1A pdf, ピン配列
NanoAmp Solutions, Inc.
Functional Block Diagram
N02L1618C1A
AdvancewIwnwf.oDartamShaeett4iUo.cnom
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A16
Page
Address
Decode
Logic
CE
WE Control
OE Logic
UB
LB
8K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXX
L XXHH
L L X3 L1 L1
L H L L1 L1
L H H L1 L1
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Write3
Read
Active
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3


3Pages


N02L1618C1A 電子部品, 半導体
NanoAmp Solutions, Inc.
N02L1618C1A
AdvancewIwnwf.oDartamShaeett4iUo.cnom
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Power Supply Voltage
Operating Temperature
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
tRC
tAA
tCO
tOE
tLB, tUB
tLZ
tOLZ
tLBZ, tUBZ
tHZ
tOHZ
tLBHZ, tUBHZ
tOH
tWC
tCW
tAW
tLBW, tUBW
tWP
tAS
tWR
tWHZ
tDW
tDH
tOW
0.1VCC to 0.9 VCC
5ns
0.5 VCC
CL = 30pF
1.65 - 2.2V
-40 to +85 oC
85ns
Min.
Max.
85
85
85
30
85
10
5
10
30
30
30
5
85
50
50
50
50
0
0
25
40
0
10
70ns
Min.
Max.
70
70
70
25
70
10
5
10
25
25
25
5
70
40
40
40
40
0
0
20
40
0
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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部品番号部品説明メーカ
N02L1618C1A

2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit

NanoAmp Solutions
NanoAmp Solutions


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