DataSheet.jp

PDF MTD6N20E Data sheet ( 特性 )

部品番号 MTD6N20E
部品説明 TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 

このページの下部にプレビューとMTD6N20Eダウンロード(pdfファイル)リンクがあります。

Total 10 pages

No Preview Available !

MTD6N20E Datasheet, MTD6N20E PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Data Sheet
TMOS E-FET .
Power Field Effect Transistor
DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add –T4 Suffix to Part Number
G
®
D
S
Order this document
by MTD6N20E/D
www.DataSheet4U.com
MTD6N20E
Motorola Preferred Device
TMOS POWER FET
6.0 AMPERES
200 VOLTS
RDS(on) = 0.7 OHM
CASE 369A–13, Style 2
DPAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
200
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
— Non–repetitive (tp 10 ms)
VDGR
VGS
VGSM
200
± 20
± 40
Vdc
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp 10 µs)
ID 6.0 Adc
ID 3.8
IDM 18 Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
PD 50 Watts
0.4 W/°C
1.75 Watts
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 3.0 mH, RG = 25 )
TJ, Tstg
EAS
– 55 to 150
54
°C
mJ
Thermal Resistance — Junction to Case
RθJC 2.50 °C/W
— Junction to Ambient
RθJA
100
— Junction to Ambient, when mounted to minimum recommended pad size
RθJA
71.4
Maximum Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL 260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
1

1 Page







ページ 合計 : 10 ページ
 
PDF
ダウンロード
[ MTD6N20E.PDF ]


共有リンク

Link :


おすすめデータシート

部品番号部品説明メーカ
MTD6N20E

Power MOSFET 6 Amps

ON Semiconductor
ON Semiconductor
MTD6N20E

TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

Motorola Semiconductors
Motorola Semiconductors


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap