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PDF MMBT4403WT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT4403WT1 | |
| Descripción | Switching Transistor PNP Silicon | |
| Fabricantes | ON Semiconductor | |
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MMBT4403WT1
Switching Transistor
PNP Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating: Human Body Model; 4 kV,
Machine Model; 400 V
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−40
−40
−5.0
−600
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
150 mW
833 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
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http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
2T D
2T = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
MMBT4403WT1
SC−70 3000/Tape & Reel
MMBT4403WT1G SC−70 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 2
1
Publication Order Number:
MMBT4403WT1/D
1 page  
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
VCE = 1.0 V
VCE = 10 V
MMBT4403WT1
STATIC CHARACTERISTICS
TJ = 125°C
25°C
−55 °C
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0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
30
50 70 100
200 300 500
1.0
0.8
0.6
IC = 1.0 mA
0.4
10 mA
100 mA
0.2
0
0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IB, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
5.0 7.0 10
500 mA
20 30
50
1.0
TJ = 25°C
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
VBE(sat) @ VCE = 10 V
0.2
0
0.1 0.2
VCE(sat) @ IC/IB = 10
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
500
0.5
0
qVC for VCE(sat)
0.5
1.0
1.5
2.0 qVS for VBE
2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 17. Temperature Coefficients
500
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| PDF Descargar | [ Datasheet MMBT4403WT1.PDF ] | |
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