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PDF HCP20C60 Data sheet ( Hoja de datos )

Número de pieza HCP20C60
Descripción Silicon Controlled Rectifier
Fabricantes SHANTOU HUASHAN ELECTRONIC DEVICES 
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No Preview Available ! HCP20C60 Hoja de datos, Descripción, Manual

Shantou Huashan Electronic Devices Co.,Ltd.
www.DataSheet4U.com
HCP20C60
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=20A)
* Low On-State Voltage (1.3V(Typ.)@ ITM)
* Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection,motor control cicuit in power
tool,inrush current limit circuit and heating control system.
Absolute Maximum RatingsTa=25unless otherwise specified)
Tstg——Storage Temperature ------------------------------------------------------ -40~125
Tj ——Operating Junction Temperature ---------------------------------------------- -40~125
VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
ITRMS)——R.M.S On-State Current180º Conduction Angles---------------------------------------- 20A
IT(AV) ——Average On-State Current (Half Sine Wave : TC = 102 °C) -----------------------------------------13A
ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 220A
I2t ——Circuit Fusing Considerations(t = 8.3ms) ------------------------------------------------------------ 242 A2s
PGM ——Forward Peak Gate Power Dissipation (Ta=25℃) --------------------------------------------------- 20W
PG(AV) ——Forward Average Gate Power Dissipation (Ta=25℃,t=8.3ms) ---------------------------------- 1W
IFGM ——Forward Peak Gate Current -------------------------------------------------------------------------------- 5A
VRGM ——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V

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