Transistors
Power Transistor (−100V, −8A)
2SB1668
www.DataSheet4U.com
2SB1668
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2607.
!External dimensions (Units : mm)
10.0
φ 3.2
4.5
2.8
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗ Single pulse, Pw = 100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−100
−100
−7
−8
−10
2
30
150
−55 ∼ +150
Unit
V
V
V
A (DC)
A (Pulse) ∗
W
W (Tc = 25°C)
°C
°C
1.2 1.3
0.8
2.54 2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1668
TO-220FN
1k~20k
-
500
!Circuit diagram
B
C
R1
R1 5kΩ
R2 300kΩ
R2
E
B : Base
C : Collector
E : Emitter
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗1 Measured using pulse current.
Symbol
Min. Typ. Max.
BVCBO
BVCEO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
−100
−100
−
−
−
1000
−
−
−
−
−
−
−1.0
10000
12
90
−
−
−10
−3
−1.5
20000
−
−
∗ 2 Transition frequency of the device.
Unit
V
V
µA
mA
V
−
MHz
pF
Conditions
IC = −50µA
IC = −5mA
VCB = −100V
VEB = −5V
IC/IB = −3A/−6mA
VCE/IC = −3V/−2A
VCE = −5V , IE = 0.5A , f = 10MHz
VCB = −10V , IE = 0A , f = MHz
∗1
∗1
∗2
