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2SB166100MA PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SB166100MA
部品説明 LOW IR SCHOTTKY BARRIER DIODE CHIPS
メーカ Silan Microelectronics Joint-stock
ロゴ Silan Microelectronics Joint-stock ロゴ 

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2SB166100MA
2SB166100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB166100MA is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Ø Due to special schottky barrier structure, the chips
have very low reverse leakage current ( typical
IR=0.002mA@ Vr=100V ) and maximum 150°C
operation junction temperature;
Ø Low power losses, high efficiency;
Ø Guard ring construction for transient protection;
Ø High ESD capability;
Ø High surge capability;
Chip Topography and Dimensions
La: Chip Size: 1660mm;
Lb: Pad Size: 1565mm;
Ø Packaged products are widely used in switching
power suppliers, polarity protection circuits and
ORDERING SPECIFICATIONS
other electronic circuits;
Ø Chip Size: 1660µm X 1660µm;
Ø Chip Thickness: 280±20µm;
Ø Have two top side electrode materials for customer
to choose, detail refer to ordering specifications.
Product Name
Specification
2SB166100MAYY For Axial leads package
For Au and AlSi wire bonding
2SB166100MAYL
package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
100
5
150
150
-40~150
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25 )
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VBR
VF
IR
Test Conditions
IR=0.5mA
IF=5A
VR=100V
Min.
100
--
--
Max.
--
0.85
0.5
Unit
V
V
mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.04.27
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