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RSE002N06 の電気的特性と機能

RSE002N06のメーカーはROHM Semiconductorです、この部品の機能は「2.5V Drive Nch MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 RSE002N06
部品説明 2.5V Drive Nch MOSFET
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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RSE002N06 Datasheet, RSE002N06 PDF,ピン配置, 機能
www.DataSheet4U.com
2.5V Drive Nch MOSFET
RSE002N06
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(EMT3).
3) Low voltage drive(2.5V drive).
Application
Switching
Dimensions (Unit : mm)
EMT3
1.6
0.3
(3)
0.7
0.55
(1)Source
(2)Gate
(3)Drain
(2) (1)
0.2 0.2
0.5 0.5
1.0
0.15
Abbreviated symbol : RK
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSE002N06
Taping
TL
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
60
20
250
1
125
1
150
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Unit
V
V
mA
A
mA
A
mW
C
C
Inner circuit
(3)
2
(2)
(1) Source
(2) Gate
(3) Drain
1
(1)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)*
Limits
833
Unit
C / W
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.A

1 Page





RSE002N06 pdf, ピン配列
RSE002N06
Electrical characteristic curves
0.5
Ta= 25C
Pulsed
0.4
VGS= 10V
0.3
VGS= 4.5V
VGS= 4.0V
0.2
0.1
0
0
VGS= 2.8V
VGS= 2.5V
0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics( I )
0.5
VGS= 10V
0.4 VGS= 4.5V
VGS= 4.0V
Ta= 25C
Pulsed
0.3
VGS= 2.8V
0.2
0.1 VGS= 2.5V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.2 Typical Output Characteristics( II )
Data Sheet
www.DataSheet4U.com
1
VDS= 10V
Pulsed
0.1
0.01
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
0.001
0.0001
0 0.5 1 1.5 2 2.5 3
GATE-SOURCE VOLTAGE : VGS[V]
Fig.3 Typical Transfer Characteristics
100
Ta= 25C
Pulsed
10
1
VGS= 2.5V
VGS= 4.0V
VGS= 4.5V
VGS= 10V
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( I )
100
VGS= 10V
Pulsed
10
1
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( II )
100
VGS= 4.5V
Pulsed
10
1
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( III )
100
VGS= 4.0V
Pulsed
10
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
1
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( IV )
100
VGS= 2.5V
Pulsed
10
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
1
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( IV )
1
VDS= 10V
Pulsed
0.1
Ta= -25C
Ta=25C
Ta=75C
Ta=125C
0.01
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.01 - Rev.A


3Pages


RSE002N06 電子部品, 半導体
Notice
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Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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More detail product informations and catalogs are available, please contact us.
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© 2010 ROHM Co., Ltd. All rights reserved.
R1010A

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部品番号部品説明メーカ
RSE002N06

2.5V Drive Nch MOSFET

ROHM Semiconductor
ROHM Semiconductor


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