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B100NF04LのメーカーはSTMicroelectronicsです、この部品の機能は「STB100NF04L」です。 |
部品番号 | B100NF04L |
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部品説明 | STB100NF04L | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとB100NF04Lダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
STB100NF04L
N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STB100NF04L
40 V <0.0042Ω
s TYPICAL RDS(on) = 0.0036 Ω
s LOW THRESHOLD DRIVE
s 100% AVALANCHE TESTED
s LOGIC LEVEL DEVICE
ID
100 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
3
1
D2PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(*) Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Current Limited by package
February 2002
.
Value
40
40
± 16
100
70
400
300
2
3.6
1.4
-65 to 175
175
(1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, IAR = 50A, VDD= 30V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
°C
1/9
1 Page www.DataSheet4U.com
STB100NF04L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 20 V
ID = 50 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD= 32V ID= 100A VGS= 4.5V
Min.
Typ.
37
270
72
20
28.5
Max.
90
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 20 V
D = 50 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
Vclamp = 32 V
ID = 100 A
RG = 4.7Ω,
VGS = 4.5 V
(Inductive Load, Figure 5)
Min.
Typ.
90
80
85
125
160
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 100A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 100 A di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
88
240
5.5
Max.
100
400
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/9
3Pages STB100NF04L
Fig. 1: Unclamped Inductive Load Test Circuit
www.DataSheet4U.com
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
B100NF04L | STB100NF04L | STMicroelectronics |