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PDF EIC4450-15 Data sheet ( Hoja de datos )
| Número de pieza | EIC4450-15 | |
| Descripción | 4.40-5.00GHz 15-Watt Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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ISSUED: 03/30/2009
EIC4450-15
4.40-5.00GHz 15-Watt Internally Matched Power FET
2X 0.079 MIN
4X 0.102
FEATURES
• 4.40– 5.00GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +42 dBm Output Power at 1dB Compression
• 10.5 dB Power Gain at 1dB Compression
• 31% Power Added Efficiency
• -46 dBc IM3 at Po = 31 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
0.945 0.803
Excelics
EIC4450-15
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX UNITS
P1dB
G1dB
∆G
PAE
Id1dB
IM3
IDSS
Output Power at 1dB Compression
f = 4.40-5.00GHz
VDS = 10 V, IDSQ ≈ 4500mA
Gain at 1dB Compression
f = 4.40-5.00GHz
VDS = 10 V, IDSQ ≈ 4500mA
Gain Flatness
f = 4.40-5.00GHz
VDS = 10 V, IDSQ ≈ 4500mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 4500mA
f = 4.40-5.00GHz
Drain Current at 1dB Compression
f = 4.40-5.00GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 31 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 5.00GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
41 42
dBm
9.5 10.5
dB
±0.7 dB
31
4500
5100
%
mA
-43 -46
dBc
9000
13000
mA
VP Pinch-off Voltage
VDS = 3 V, IDS = 84 mA
-2.5 -4.0
V
RTH Thermal Resistance3
1.8 2.1 oC/W
Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Pin
Input Power
Output power reach 3dB
Gain Compression point
Tch Channel Temperature
175°C
Tstg
Storage Temperature
-65°C to +175°C
Pt Total Power Dissipation (Tc=25°)
71W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
OPERATING2
10V
-4V
Output power reach 3dB
Gain Compression point
175°C
-65°C to +175°C
71W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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| PDF Descargar | [ Datasheet EIC4450-15.PDF ] | |
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