DataSheet.jp

RJK03F8DNS の電気的特性と機能

RJK03F8DNSのメーカーはRenesas Technologyです、この部品の機能は「Silicon N Channel Power MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 RJK03F8DNS
部品説明 Silicon N Channel Power MOS FET
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 




このページの下部にプレビューとRJK03F8DNSダウンロード(pdfファイル)リンクがあります。
Total 7 pages

No Preview Available !

RJK03F8DNS Datasheet, RJK03F8DNS PDF,ピン配置, 機能
RJK03F8DNS
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheetwww.DataSheet4U.com
REJ03G1918-0100
Rev.1.00
Apr 21, 2010
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 7 mtyp. (at VGS = 8 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 78
5 678
D DDD
4 321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±12
16
64
16
10
10
12.5
10.0
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1918-0100 Rev.1.00
Apr 21, 2010
Page 1 of 6

1 Page





RJK03F8DNS pdf, ピン配列
RJK03F8DNS
Main Characteristics
Power vs. Temperature Derating
20
15
10
5
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
4.5 V
8V
16
2.9 V
Pulse Test
2.8 V
12
2.7 V
8
4
VGS = 2.5 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
320
Pulse Test
240
160
80 ID = 10 A
5A
2A
0 3 6 9 12
Gate to Source Voltage VGS (V)
REJ03G1918-0100 Rev.1.00
Apr 21, 2010
Preliminary
www.DataSheet4U.com
Maximum Safe Operation Area
100
1 ms
100
10
μs
μs
10
PW = 10 ms
1
Operation in
this area is
0.1 limited by RDS(on)
Tc = 25 °C
0.01 1 shot Pulse
0.1 1
10 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 5 V
Pulse Test
16
12
8
4 Tc = 75°C
25°C
–25°C
0
12
34
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10 VGS = 4.5 V
8V
3
1
1 3 10 30 100
Drain Current ID (A)
Page 3 of 6


3Pages


RJK03F8DNS 電子部品, 半導体
RJK03F8DNS
Package Dimensions
Package Name
JEITA Package Code
HWSON-8 P-HWSON8-2.9x3.1-0.65
RENESAS Code
PWSN0008JB-A
Previous Code
MASS[Typ.]
0.022g
3.3 ± 0.1
0.8 Max
Preliminary
www.DataSheet4U.com
2.25 ± 0.2
0.575 Typ
0.65 Typ
3.1 ± 0.1
0.22 Typ
(2.55)
0.32 ± 0.08
Ordering Information
Part No.
RJK03F8DNS-00-J5
Quantity
5000 pcs
Taping
Shipping Container
REJ03G1918-0100 Rev.1.00
Apr 21, 2010
Page 6 of 6

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ RJK03F8DNS データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
RJK03F8DNS

Silicon N Channel Power MOS FET

Renesas Technology
Renesas Technology


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap