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RJK0204DPA の電気的特性と機能

RJK0204DPAのメーカーはRenesas Technologyです、この部品の機能は「Silicon N Channel Power MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 RJK0204DPA
部品説明 Silicon N Channel Power MOS FET
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 




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RJK0204DPA Datasheet, RJK0204DPA PDF,ピン配置, 機能
Preliminary Datasheetwww.DataSheet4U.com
RJK0204DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
REJ03G1922-0210
Rev.2.10
Apr 27, 2010
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.2 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5678
5 678
D DDD
4321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
25
±20
50
200
50
21
55.1
50
2.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1922-0210 Rev.2.10
Apr 27, 2010
Page 1 of 6

1 Page





RJK0204DPA pdf, ピン配列
RJK0204DPA
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
100
4.5 V
10 V
3.8 V
3.6 V
Pulse Test
80
3.4 V
60 3.2 V
40 3.0 V
20
VGS = 2.8 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
100
50 ID = 20 A
10 A
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
REJ03G1922-0210 Rev.2.10
Apr 27, 2010
Preliminary
www.DataSheet4U.com
Maximum Safe Operation Area
1000
10 μs
100
1
100
ms
μs
10 PW = 10 ms
Operation in
1 this area is
limited by RDS(on)
Tc = 25 °C
0.1 1 shot Pulse
0.1 1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 5 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
–25°C
0 1 2 34 5
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
10
VGS = 4.5 V
3
10 V
1
1 3 10 30 100 300 1000
Drain Current ID (A)
Page 3 of 6


3Pages


RJK0204DPA 電子部品, 半導体
RJK0204DPA
Package Dimensions
Package Name
WPAK(2)
JEITA Package Code
RENESAS Code
PWSN0008DC-A
Previous Code
WPAK(2)V
MASS[Typ.]
0.07g
5.1 ± 0.2
0.8Max
0.04Min
Preliminary
www.DataSheet4U.com
4.21Typ
1.27Typ
Unit: mm
3.9 ± 0.2
0.545Typ
1.27Typ
4.90 ± 0.1
0.2Typ
0.4 ± 0.06
Ordering Information
Part No.
RJK0204DPA-00-J53
Quantity
3000 pcs
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Taping
Shipping Container
REJ03G1922-0210 Rev.2.10
Apr 27, 2010
Page 6 of 6

6 Page



ページ 合計 : 7 ページ
 
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部品番号部品説明メーカ
RJK0204DPA

Silicon N Channel Power MOS FET

Renesas Technology
Renesas Technology


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