|
|
PDF TPCA8011-H Data sheet ( Hoja de datos )
| Número de pieza | TPCA8011-H | |
| Descripción | High Efficiency DC/DC Converter Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TPCA8011-H (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
TPCA8011-H
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII)
TPCA8011-H
High Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
Unit: mm
0.5±0.1 1.27 0.4±0.1
85
0.05 M A
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW =16 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.)
• High forward transfer admittance: |Yfs| =120 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 μA)
0.15±0.05
0.95±0.05
14
5.0±0.2
0.595
A
0.166±0.05
S 0.05 S
1 4 1.1±0.2
4.25±0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
20
20
±12
40
120
45
2.8
1.6
208
40
2.0
150
−55 to 150
Unit
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
8 5 0.8±0.1
1,2,3：SOURCE 4：GATE
5,6,7,8：DRAIN
JEDEC
JEITA
TOSHIBA
―
―
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-16
1 page  
RDS (ON) – Ta
12
Common source
Pulse test
8
VGS = 2.5 V
4
VGS = 4.5 V
ID = 40 A
10, 20 A
ID = 10, 20, 40 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCA8011-H
www.DataSheet4U.com
1000
100
IDR – VDS
Common source
Ta = 25°C
Pulse test
4.5
4
3
2.5
10
1 VGS = 0 V
1
0 −0.2 −0.4 −0.6 −0.8 −1.0
Drain-source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
0.1
1
Crss
10
Drain-source voltage VDS (V)
100
Vth – Ta
2.5
Common source
VDS = 10 V
2.0 ID = 0.2 mA
Pulse test
1.5
1.0
0.5
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
20
VDS
16
Dynamic input/output
characteristics
10
8
12 6
84
Common source
4
VGS
ID = 40 A
2
Ta = 25°C
Pulse test
00
0 10 20 30 40 50
Total gate charge Qg (nC)
5
2006-11-16
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCA8011-H.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TPCA8011-H | High Efficiency DC/DC Converter Applications | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |