|
|
IRFBA90N20DPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFBA90N20DPBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFBA90N20DPBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
SMPS MOSFET
PD - 95902
Applications
l High frequency DC-DC converters
l Lead-Free
IRFBA90N20DPbF
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
0.023Ω
ID
98A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Super-220™
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended Clip Force
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
98
71
390
650
4.3
± 30
6.3
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
V/ns
°C
N
Typ.
–––
0.50
–––
Max.
0.23
–––
58
Units
°C/W
Notes through are on page 8
www.irf.com
1
09/15/04
1 Page www.DataSheet4U.com
IRFBA90N20DPbF
1000
100
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.01
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
5.0V
10
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.10
5.0
VDS = 15V
20µs PULSE WIDTH
7.0
9.0
11.0
13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5
I D = 98A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
V GS = 10V
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages www.DataSheet4U.com
IRFBA90N20DPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
2000
1600
1200
TOP
BOTTOM
ID
24A
42A
59A
800
400
0
25 50 75 100 125
Starting T , JJunction Temperature
150 175
( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ IRFBA90N20DPBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFBA90N20DPBF | Power MOSFET ( Transistor ) | International Rectifier |