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IRFBA90N20DPBF の電気的特性と機能

IRFBA90N20DPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFBA90N20DPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFBA90N20DPBF Datasheet, IRFBA90N20DPBF PDF,ピン配置, 機能
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SMPS MOSFET
PD - 95902
Applications
l High frequency DC-DC converters
l Lead-Free
IRFBA90N20DPbF
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
0.023
ID
98A†
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Super-220™
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended Clip Force
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
98†
71†
390
650
4.3
± 30
6.3
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
V/ns
°C
N
Typ.
–––
0.50
–––
Max.
0.23
–––
58
Units
°C/W
Notes  through † are on page 8
www.irf.com
1
09/15/04

1 Page





IRFBA90N20DPBF pdf, ピン配列
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IRFBA90N20DPbF
1000
100
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.01
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
5.0V
10
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.10
5.0
VDS = 15V
20µs PULSE WIDTH
7.0
9.0
11.0
13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
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3.5
I D = 98A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
V GS = 10V
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFBA90N20DPBF 電子部品, 半導体
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IRFBA90N20DPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
2000
1600
1200
TOP
BOTTOM
ID
24A
42A
59A
800
400
0
25 50 75 100 125
Starting T , JJunction Temperature
150 175
( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Link :


部品番号部品説明メーカ
IRFBA90N20DPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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