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PDF STL75N3LLZH5 Data sheet ( Hoja de datos )
| Número de pieza | STL75N3LLZH5 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Features
STL75N3LLZH5
N-channel 30 V, 0.0055 Ω, 19 A PowerFLAT™ (5x6)
STripFET™ V Power MOSFET
Preliminary data
Type
STL75N3LLZH5
VDSS
30 V
RDS(on)
max
<0.0061 Ω
ID
19 A (1)
1. The value is rated according Rthj-pcb
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
■ Built in G-S Zener diodes
PowerFLAT™ ( 5x6 )
Application
■ Switching applications
Figure 1. Internal schematic diagram
Description
The STL75N3LLZH5 is an N-channel
STripFET™V Power MOSFET which has been
designed to achieve very low on-state resistance
providing also one of the best-in-class figure of
merit (FOM).
Table 1. Device summary
Order code
Marking
STL75N3LLZH5
75N3LLZH5
Package
PowerFLAT™ (5x6)
Packaging
Tape and reel
June 2010
Doc ID 17661 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/9
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STL75N3LLZH5
3 Test circuits
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Test circuits
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
VDD
VGS
PW
VD
RG
RL
2200
µF
D.U.T.
3.3
µF VDD
12V 47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
µF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
AM01468v1
PW
1kΩ
AM01469v1
Figure 4. Test circuit for inductive load
Figure 5. Unclamped inductive load test
switching and diode recovery times
circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
B
B
G
RG
L=100µH
D
S
3.3
µF
1000
µF
VDD
Vi
L
VD
2200
3.3
µF µF VDD
ID
D.U.T.
AM01470v1
Pw
AM01471v1
Figure 6. Unclamped inductive waveform
V(BR)DSS
VD
Figure 7. Switching time waveform
ton
tdon
tr
toff
tdoff
tf
VDD
IDM
ID
VDD
0
90%
10% VDS
90%
VGS
90%
10%
AM01472v1 0 10%
AM01473v1
Doc ID 17661 Rev 1
5/9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STL75N3LLZH5.PDF ] | |
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