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Número de pieza | IRFH5302PBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRFH5302PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30
2.1
29
1.6
h100
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Synchronous MOSFET for buck converters
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Benefits
Low RDSon (≤ 2.1mΩ)
Low Thermal Resistance to PCB (≤ 1.2°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
⇒
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5302TRPBF
IRFH5302TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 8
www.irf.com
Max.
30
± 20
32
26
100
100
h
h
400
3.6
100
0.029
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
10/20/09
1 page 6.0
ID = 50A
5.0
4.0
3.0 TJ = 125°C
2.0
1.0
2
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5302PbFwww.DataSheet4U.com
600
ID
500 TOP 8.7A
16A
BOTTOM 50A
400
300
200
100
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
- VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
www.irf.com
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFH5302PBF.PDF ] |
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IRFH5302PBF | HEXFET Power MOSFET | International Rectifier |
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